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A pentacene-based organic thin film memory transistor.

Mabrook, M.F. and Yun, Y.J. and Pearson, C. and Zeze, D.A. and Petty, M.C. (2009) 'A pentacene-based organic thin film memory transistor.', Applied physics letters., 94 (17). p. 173302.

Abstract

An organic memory device based on a pentacene thin film transistor is demonstrated. Gold nanoparticles have been used as the charge storage elements while a thin film of polymethylmethacrylate formed the gate insulator. The electrical characteristics and the memory behavior of the organic thin film memory transistor (OTFMT) are reported. Under an appropriate gate bias (1 s pulses), the gold nanoparticles are charged and discharged, resulting in significant threshold voltage shifts of the OTFMT. The detailed programing and erasing procedures are reported.

Item Type:Article
Full text:PDF - Published Version (279Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.3126021
Publisher statement:Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Mabrook, M.F. and Yun, Y.J. and Pearson, C. and Zeze, D.A. and Petty, M.C. (2009) 'A pentacene-based organic thin film memory transistor.', Applied physics letters., 94 (17). p. 173302 and may be found at http://dx.doi.org/10.1063/1.3126021
Record Created:23 Oct 2012 15:50
Last Modified:29 Oct 2012 10:30

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