A pentacene-based organic thin film memory transistor

Mabrook, MF; Yun, YJ; Pearson, C; Zeze, DA; Petty, MC

doi:10.1063/1.3126021

A pentacene-based organic thin film memory transistor

Mabrook, MF; Yun, YJ; Pearson, C; Zeze, DA; Petty, MC

Authors

MF Mabrook

YJ Yun

C Pearson

Professor Dagou Zeze d.a.zeze@durham.ac.uk
Professor

MC Petty

Abstract

An organic memory device based on a pentacene thin film transistor is demonstrated. Gold nanoparticles have been used as the charge storage elements while a thin film of polymethylmethacrylate formed the gate insulator. The electrical characteristics and the memory behavior of the organic thin film memory transistor (OTFMT) are reported. Under an appropriate gate bias (1 s pulses), the gold nanoparticles are charged and discharged, resulting in significant threshold voltage shifts of the OTFMT. The detailed programing and erasing procedures are reported.

Citation

Mabrook, M., Yun, Y., Pearson, C., Zeze, D., & Petty, M. (2009). A pentacene-based organic thin film memory transistor. Applied Physics Letters, 94(17), Article 173302. https://doi.org/10.1063/1.3126021

Journal Article Type	Article
Publication Date	Apr 27, 2009
Deposit Date	Oct 23, 2012
Publicly Available Date	Oct 29, 2012
Journal	Applied Physics Letters
Print ISSN	0003-6951
Electronic ISSN	1077-3118
Publisher	American Institute of Physics
Peer Reviewed	Peer Reviewed
Volume	94
Issue	17
Article Number	173302
DOI	https://doi.org/10.1063/1.3126021

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Copyright Statement
© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Mabrook, M.F. and Yun, Y.J. and Pearson, C. and Zeze, D.A. and Petty, M.C. (2009) 'A pentacene-based organic thin film memory transistor.', Applied physics letters., 94 (17). p. 173302 and may be found at http://dx.doi.org/10.1063/1.3126021