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Pentacene thin film transistors with a poly(methyl methacrylate) gate dielectric : optimization of device performance.

Yun, Y.J. and Pearson, C. and Petty, M.C. (2009) 'Pentacene thin film transistors with a poly(methyl methacrylate) gate dielectric : optimization of device performance.', Journal of applied physics., 105 (3). 034508.

Abstract

The electrical characteristics of pentacene-based organic thin film transistors (OTFTs) using poly(methyl methacrylate) (PMMA) as the gate dielectric are reported. Uniform pinhole-free and crack-free films of PMMA could be obtained by spin coating, with a lower limit of thickness of about 150 nm. The effects of the insulator thickness and channel dimensions on the performance of the devices have been investigated. Leakage currents, which are present in many polymeric gate dielectrics, were reduced by patterning the pentacene active layer. The resulting devices exhibited minimal hysteresis in their output and transfer characteristics. Optimized OTFT structures possessed a field-effect mobility of 0.33 cm(2) V-1 s(-1), a threshold voltage of -4 V, a subthreshold slope of 1.5 V/decade, and an on/off current ratio of 1.2x10(6).

Item Type:Article
Keywords:Carrier mobility, Conducting polymers, Leakage currents, Organic semiconductors, Thin film transistors.
Full text:PDF - Published Version (960Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.3075616
Publisher statement:Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Yun, Y.J. and Pearson, C. and Petty, M.C. (2009) 'Pentacene thin film transistors with a poly(methyl methacrylate) gate dielectric : optimization of device performance.', Journal of applied physics., 105 (3). 034508 and may be found at http://dx.doi.org/10.1063/1.3075616
Record Created:24 Oct 2012 10:35
Last Modified:24 Oct 2012 15:52

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