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Pentacene thin film transistors with a poly(methyl methacrylate) gate dielectric: Optimization of device performance

Yun, YJ; Pearson, C; Petty, MC

Pentacene thin film transistors with a poly(methyl methacrylate) gate dielectric: Optimization of device performance Thumbnail


Authors

YJ Yun

C Pearson

MC Petty



Abstract

The electrical characteristics of pentacene-based organic thin film transistors (OTFTs) using poly(methyl methacrylate) (PMMA) as the gate dielectric are reported. Uniform pinhole-free and crack-free films of PMMA could be obtained by spin coating, with a lower limit of thickness of about 150 nm. The effects of the insulator thickness and channel dimensions on the performance of the devices have been investigated. Leakage currents, which are present in many polymeric gate dielectrics, were reduced by patterning the pentacene active layer. The resulting devices exhibited minimal hysteresis in their output and transfer characteristics. Optimized OTFT structures possessed a field-effect mobility of 0.33 cm(2) V-1 s(-1), a threshold voltage of -4 V, a subthreshold slope of 1.5 V/decade, and an on/off current ratio of 1.2x10(6).

Citation

Yun, Y., Pearson, C., & Petty, M. (2009). Pentacene thin film transistors with a poly(methyl methacrylate) gate dielectric: Optimization of device performance. Journal of Applied Physics, 105(3), Article 034508. https://doi.org/10.1063/1.3075616

Journal Article Type Article
Publication Date Feb 1, 2009
Deposit Date Oct 24, 2012
Publicly Available Date Oct 24, 2012
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 105
Issue 3
Article Number 034508
DOI https://doi.org/10.1063/1.3075616
Keywords Carrier mobility, Conducting polymers, Leakage currents, Organic semiconductors, Thin film transistors.

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Copyright Statement
Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Yun, Y.J. and Pearson, C. and Petty, M.C. (2009) 'Pentacene thin film transistors with a poly(methyl methacrylate) gate dielectric : optimization of device performance.', Journal of applied physics., 105 (3). 034508 and may be found at http://dx.doi.org/10.1063/1.3075616







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