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Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack.

Mahapatra, R. and Chakraborty, A.K. and Horsfall, A.B. and Wright, N.G. and Beamson, G. and Coleman, K.S. (2008) 'Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack.', Applied physics letters., 92 (4). 042904.

Abstract

The band alignment of HfO2/SiO2/SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization. Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corresponds to the HfO2/SiC band offset while the larger one of 2.2 eV is due to the interfacial SiO2/SiC. The barrier height is extracted to be 1.5 eV from the Schottky emission characteristics and is higher than the reported value for HfO2 on SiC without interfacial SiO2. Thus, presence of an interfacial SiO2 layer increases band offsets to reduce the leakage current characteristics.

Item Type:Article
Keywords:Dielectric materials, Hafnium compounds, Leakage currents, Schottky effect, Silicon compounds, Valence bands, Wide band gap semiconductors, X-ray photoelectron spectra.
Full text:PDF - Published Version (427Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.2839314
Publisher statement:Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Mahapatra, R. and Chakraborty, A.K. and Horsfall, A.B. and Wright, N.G. and Beamson, G. and Coleman, K.S. (2008) 'Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack.', Applied physics letters., 92 (4). 042904 and may be found at http://dx.doi.org/10.1063/1.2839314
Record Created:26 Oct 2012 11:05
Last Modified:29 Oct 2012 10:21

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