Mahapatra, R. and Chakraborty, A.K. and Horsfall, A.B. and Wright, N.G. and Beamson, G. and Coleman, K.S. (2008) 'Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack.', Applied physics letters., 92 (4). 042904.
The band alignment of HfO2/SiO2/SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization. Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corresponds to the HfO2/SiC band offset while the larger one of 2.2 eV is due to the interfacial SiO2/SiC. The barrier height is extracted to be 1.5 eV from the Schottky emission characteristics and is higher than the reported value for HfO2 on SiC without interfacial SiO2. Thus, presence of an interfacial SiO2 layer increases band offsets to reduce the leakage current characteristics.
|Keywords:||Dielectric materials, Hafnium compounds, Leakage currents, Schottky effect, Silicon compounds, Valence bands, Wide band gap semiconductors, X-ray photoelectron spectra.|
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|Publisher Web site:||http://dx.doi.org/10.1063/1.2839314|
|Publisher statement:||© 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Mahapatra, R. and Chakraborty, A.K. and Horsfall, A.B. and Wright, N.G. and Beamson, G. and Coleman, K.S. (2008) 'Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack.', Applied physics letters., 92 (4). 042904 and may be found at http://dx.doi.org/10.1063/1.2839314|
|Record Created:||26 Oct 2012 11:05|
|Last Modified:||18 Aug 2015 12:55|
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