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Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack

Mahapatra, R; Chakraborty, AK; Horsfall, AB; Wright, NG; Beamson, G; Coleman, KS

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Authors

R Mahapatra

AK Chakraborty

AB Horsfall

NG Wright

G Beamson



Abstract

The band alignment of HfO2/SiO2/SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization. Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corresponds to the HfO2/SiC band offset while the larger one of 2.2 eV is due to the interfacial SiO2/SiC. The barrier height is extracted to be 1.5 eV from the Schottky emission characteristics and is higher than the reported value for HfO2 on SiC without interfacial SiO2. Thus, presence of an interfacial SiO2 layer increases band offsets to reduce the leakage current characteristics.

Citation

Mahapatra, R., Chakraborty, A., Horsfall, A., Wright, N., Beamson, G., & Coleman, K. (2008). Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack. Applied Physics Letters, 92(4), Article 042904. https://doi.org/10.1063/1.2839314

Journal Article Type Article
Publication Date Jan 28, 2008
Deposit Date Oct 26, 2012
Publicly Available Date Mar 29, 2024
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 92
Issue 4
Article Number 042904
DOI https://doi.org/10.1063/1.2839314
Keywords Dielectric materials, Hafnium compounds, Leakage currents, Schottky effect, Silicon compounds, Valence bands, Wide band gap semiconductors, X-ray photoelectron spectra.

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Copyright Statement
© 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Mahapatra, R. and Chakraborty, A.K. and Horsfall, A.B. and Wright, N.G. and Beamson, G. and Coleman, K.S. (2008) 'Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack.', Applied physics letters., 92 (4). 042904 and may be found at http://dx.doi.org/10.1063/1.2839314




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