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Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept.

Atkinson, D. and Eastwood, D.S. and Bogart, L.K. (2008) 'Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept.', Applied physics letters., 92 (2). 022510.

Abstract

Here, we report on the control of domain wall pinning at notch features patterned in Permalloy planar nanowires by selecting the micromagnetic configuration of the domain wall using a transverse magnetic field. The domain wall behavior was investigated both experimentally using focused magneto-optic Kerr effect measurements of lithographically patterned nanowires and with micromagnetic simulations. The pinning behavior observed is utilized in a concept for multibit memory cells applicable as the free layer in magnetic random access memory where the domain structure is defined by the location of domain walls that either pin or passby pinning structures depending upon the domain wall configuration selected.

Item Type:Article
Keywords:Kerr magneto-optical effect, Magnetic domain walls, Nanowires, Permalloy, Random-access storage.
Full text:PDF - Published Version (293Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.2832771
Publisher statement:Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Atkinson, D. and Eastwood, D.S. and Bogart, L.K. (2008) 'Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept.', Applied physics letters., 92 (2). 022510 and may be found at http://dx.doi.org/10.1063/1.2832771
Record Created:26 Oct 2012 11:20
Last Modified:29 Oct 2012 10:18

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