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Electrical behavior of memory devices based on fluorene-containing organic thin films.

Dimitrakis, P. and Normand, P. and Tsoukalas, D. and Pearson, C. and Ahn, J.H. and Mabrook, M.F. and Zeze, D.A. and Petty, M.C. and Kamtekar, K.T. and Wang, C.S. and Bryce, M.R. and Green, M. (2008) 'Electrical behavior of memory devices based on fluorene-containing organic thin films.', Journal of applied physics., 104 (4). 044510.

Abstract

We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl}-9,9-dihexyl-N,N-diphenyl-fluoren-2-amine. The addition of gold nanoparticles (0.5 wt %) did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a “forming” process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole–Frenkel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses.

Item Type:Article
Keywords:Aluminium, Electrical conductivity, Nanoparticles, Organic compounds, Poole-Frenkel effect, Random-access storage, Metallic nanoparticles, Insulating films, Bistability, Monolayers, Conduction, Penetration, Mechanism, Transport, Elements, Polymer.
Full text:PDF - Published Version (937Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.2968551
Publisher statement:Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Dimitrakis, P. and Normand, P. and Tsoukalas, D. and Pearson, C. and Ahn, J.H. and Mabrook, M.F. and Zeze, D.A. and Petty, M.C. and Kamtekar, K.T. and Wang, C.S. and Bryce, M.R. and Green, M. (2008) 'Electrical behavior of memory devices based on fluorene-containing organic thin films.', Journal of applied physics., 104 (4). 044510 and may be found at http://dx.doi.org/10.1063/1.2968551
Record Created:29 Oct 2012 14:50
Last Modified:02 Nov 2012 13:34

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