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Electrical behavior of memory devices based on fluorene-containing organic thin films

Dimitrakis, P; Normand, P; Tsoukalas, D; Pearson, C; Ahn, JH; Mabrook, MF; Zeze, DA; Petty, MC; Kamtekar, KT; Wang, CS; Bryce, MR; Green, M

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Authors

P Dimitrakis

P Normand

D Tsoukalas

C Pearson

JH Ahn

MF Mabrook

DA Zeze

MC Petty

KT Kamtekar

CS Wang

MR Bryce

M Green



Abstract

We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl}-9,9-dihexyl-N,N-diphenyl-fluoren-2-amine. The addition of gold nanoparticles (0.5 wt %) did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a “forming” process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole–Frenkel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses.

Citation

Dimitrakis, P., Normand, P., Tsoukalas, D., Pearson, C., Ahn, J., Mabrook, M., …Green, M. (2008). Electrical behavior of memory devices based on fluorene-containing organic thin films. Journal of Applied Physics, 104(4), Article 044510. https://doi.org/10.1063/1.2968551

Journal Article Type Article
Publication Date Aug 1, 2008
Deposit Date Oct 29, 2012
Publicly Available Date Mar 28, 2024
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 104
Issue 4
Article Number 044510
DOI https://doi.org/10.1063/1.2968551
Keywords Aluminium, Electrical conductivity, Nanoparticles, Organic compounds, Poole-Frenkel effect, Random-access storage, Metallic nanoparticles, Insulating films, Bistability, Monolayers, Conduction, Penetration, Mechanism, Transport, Elements, Polymer.

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Copyright Statement
Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Dimitrakis, P. and Normand, P. and Tsoukalas, D. and Pearson, C. and Ahn, J.H. and Mabrook, M.F. and Zeze, D.A. and Petty, M.C. and Kamtekar, K.T. and Wang, C.S. and Bryce, M.R. and Green, M. (2008) 'Electrical behavior of memory devices based on fluorene-containing organic thin films.', Journal of applied physics., 104 (4). 044510 and may be found at http://dx.doi.org/10.1063/1.2968551




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