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Limits to doping in oxides.

Robertson, J. and Clark, S.J. (2011) 'Limits to doping in oxides.', Physical Review B, 83 (7). 075205.

Abstract

The chemical trends of limits to doping of many semiconducting metal oxides is analyzed in terms of the formation energies needed to form the compensating defects. The n-type oxides are found to have high electron affinities and charge neutrality levels that lie in midgap or the upper part of their gap, whereas p-type oxides have small photoionization potentials and charge neutrality levels lying in the lower gap. The doping-limit energy range is found to vary with the bulk free energy of the compound.

Item Type:Article
Full text:PDF - Published Version (363Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1103/PhysRevB.83.075205
Publisher statement:© 2011 The American Physical Society
Record Created:27 Nov 2012 11:35
Last Modified:27 Nov 2012 12:22

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