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Characterisation of Charge Conduction Networks in Poly(3-hexylthiophene)/Polystyrene Blends using Noise Spectroscopy

Williams, A.T.; Farrar, P.; Gallant, A.J.; Atkinson, D.; Groves, C.

Characterisation of Charge Conduction Networks in Poly(3-hexylthiophene)/Polystyrene Blends using Noise Spectroscopy Thumbnail


Authors

A.T. Williams

P. Farrar



Abstract

1/f noise spectroscopy is used to investigate charge conduction networks within polymer blend space-charge-limited diodes (SCLDs) fabricated from regioregular poly(3-hexylthiophene) (P3HT) and either isotactic-polystyrene (i-PS) or amorphous-polystyrene (a-PS). Conducting AFM measurements showed that i-PS blends have heterogeneous conduction characterised by current ‘hotspots’, whereas a-PS blends showed homogeneous conduction. The difference in conducting networks between blends was clearly revealed when examining the noise spectra for the range of blend devices. Furthermore, the shape of the noise spectra suggested that as the blend composition changed, the charges sampled differing breadths of the density of states. These data suggest that noise measurements can be used as an informative technique to electrically characterise the effects of blend morphology and its effects within polymer electronic devices.

Citation

Williams, A., Farrar, P., Gallant, A., Atkinson, D., & Groves, C. (2014). Characterisation of Charge Conduction Networks in Poly(3-hexylthiophene)/Polystyrene Blends using Noise Spectroscopy. Journal of Materials Chemistry C Materials for optical and electronic devices, 2(9), 1742-1748. https://doi.org/10.1039/c3tc31849d

Journal Article Type Article
Acceptance Date Dec 15, 2013
Online Publication Date Jan 22, 2014
Publication Date Mar 1, 2014
Deposit Date Sep 18, 2013
Publicly Available Date Mar 29, 2024
Journal Journal of Materials Chemistry C Materials for optical and electronic devices
Print ISSN 2050-7526
Electronic ISSN 2050-7534
Publisher Royal Society of Chemistry
Peer Reviewed Peer Reviewed
Volume 2
Issue 9
Pages 1742-1748
DOI https://doi.org/10.1039/c3tc31849d

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