Multilevel 3 Bit-per-cell Magnetic Random Access Memory Concepts and Their Associated Control Circuit Architectures

Cramman, H.; Eastwood, D.S.; King, J.A.; Atkinson, D.

doi:10.1109/tnano.2011.2149538

Multilevel 3 Bit-per-cell Magnetic Random Access Memory Concepts and Their Associated Control Circuit Architectures

Cramman, H.; Eastwood, D.S.; King, J.A.; Atkinson, D.

Authors

Dr Helen Cramman helen.cramman@durham.ac.uk
Associate Professor

D.S. Eastwood

J.A. King

Professor Del Atkinson del.atkinson@durham.ac.uk
Professor

Abstract

Designs for two novel multilevel magnetic random access memory (MRAM) concepts are presented in this paper along with their associated control circuit architectures. Both the ChiralMEM and 3-D-MRAM concepts contain eight states with distinct electrical resistances, giving a 3 bit-per-cell capacity. Operation of the two memory concepts are presented along with designs for the circuitry in particular focusing on the conversion of three conventional binary bits to octal encoded data and the required sequence for writing eight states per cell using current-driven magnetic fields. Discrimination and subsequent conversion of the eight readout resistance levels back to three conventional binary bits are discussed along with the write sequence for controlling arrays of multibit memory cells.

Citation

Cramman, H., Eastwood, D., King, J., & Atkinson, D. (2012). Multilevel 3 Bit-per-cell Magnetic Random Access Memory Concepts and Their Associated Control Circuit Architectures. IEEE Transactions on Nanotechnology, 11(1), 63-70. https://doi.org/10.1109/tnano.2011.2149538

Journal Article Type	Article
Publication Date	Jan 1, 2012
Deposit Date	Mar 19, 2014
Publicly Available Date	May 1, 2014
Journal	IEEE Transactions on Nanotechnology
Print ISSN	1536-125X
Publisher	Institute of Electrical and Electronics Engineers
Peer Reviewed	Peer Reviewed
Volume	11
Issue	1
Pages	63-70
DOI	https://doi.org/10.1109/tnano.2011.2149538

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