Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films

Wang, M.; Rushforth, A.W.; Hindmarch, A.T.; Campion, R.P.; Edmonds, K.W.; Staddon, C.R.; Foxon, C.T.; Gallagher, B.L.

doi:10.1063/1.4795444

Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films

Wang, M.; Rushforth, A.W.; Hindmarch, A.T.; Campion, R.P.; Edmonds, K.W.; Staddon, C.R.; Foxon, C.T.; Gallagher, B.L.

Authors

M. Wang

A.W. Rushforth

Dr Aidan Hindmarch a.t.hindmarch@durham.ac.uk
Associate Professor

R.P. Campion

K.W. Edmonds

C.R. Staddon

C.T. Foxon

B.L. Gallagher

Abstract

We investigate the dependence of the magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films on the stoichiometry of the interface region. For films incorporating a thin As-deficient layer at the interface, the out-diffusion of interstitial Mn from the bottom layer is strongly suppressed, resulting in a large difference in T C and magnetic anisotropy between the two layers. X-ray reflectivity measurements show that the suppression of interstitial diffusion is correlated with an increased interface roughness. When the As-deficient interface layer is thicker than 2.5 nm, the in-plane uniaxial magnetic easy axis rotates from the [1-10] to the [110] crystalline axis.

Citation

Wang, M., Rushforth, A., Hindmarch, A., Campion, R., Edmonds, K., Staddon, C., …Gallagher, B. (2013). Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films. Applied Physics Letters, 102(11), Article 112404. https://doi.org/10.1063/1.4795444

Journal Article Type	Article
Publication Date	Mar 18, 2013
Deposit Date	Mar 19, 2013
Publicly Available Date	Jul 8, 2014
Journal	Applied Physics Letters
Print ISSN	0003-6951
Electronic ISSN	1077-3118
Publisher	American Institute of Physics
Peer Reviewed	Peer Reviewed
Volume	102
Issue	11
Article Number	112404
DOI	https://doi.org/10.1063/1.4795444
Keywords	Annealing, Interstitial defects, Semiconductor growth, Etching, Magnetic anisotropy.

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Copyright Statement
© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Wang, M. and Rushforth, A.W. and Hindmarch, A.T. and Campion, R.P. and Edmonds, K.W. and Staddon, C.R. and Foxon, C.T. and Gallagher, B.L. (2013) 'Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films.', Applied physics letters., 102 (11). p. 112404 and may be found at http://dx.doi.org/10.1063/1.4795444