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Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes

Dodd, L.E.; Gallant, A.J.; Wood, D.

Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes Thumbnail


Authors

L.E. Dodd

D. Wood



Abstract

The successful production, via two different oxidation processes, of metal-oxide-metal (MOM) diodes is presented. An innovative reactive ion etching and plasma assisted regrowth process has been used to provide oxides, which are in the thickness range 4.0–5.1 nm. These are thinner and physically more uniform than oxides grown in a furnace, resulting in diodes which should conduct via electron tunnelling across the MOM junction. Transmission electron microscopy analysis has been used in conjunction with time of flight secondary ion mass spectrometry analysis to verify oxide thickness and uniformity.

Citation

Dodd, L., Gallant, A., & Wood, D. (2013). Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes. Micro and Nano Letters, 8(8), 476-478. https://doi.org/10.1049/mnl.2013.0177

Journal Article Type Article
Publication Date Aug 1, 2013
Deposit Date Aug 29, 2013
Publicly Available Date Mar 29, 2024
Journal Micro and Nano Letters
Publisher Institution of Engineering and Technology (IET)
Peer Reviewed Peer Reviewed
Volume 8
Issue 8
Pages 476-478
DOI https://doi.org/10.1049/mnl.2013.0177

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