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UV-assisted low temperature oxide dielectric films for TFT applications

Hwang, J; Lee, K; Jeong, J; Lee, YU; Pearson, C; Petty, MC; Kim, H

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Authors

J Hwang

K Lee

J Jeong

YU Lee

C Pearson

MC Petty

H Kim



Abstract

Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annealing at 150 °C. The leakage current densities of ZrO2 and Al2O3 dielectrics are less than about 10-9 A/cm2 at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm2/V.s and an off-current density of 10-12 A/cm2. This low fabrication temperature process is compatible with future plastic electronics technology.

Citation

Hwang, J., Lee, K., Jeong, J., Lee, Y., Pearson, C., Petty, M., & Kim, H. (2014). UV-assisted low temperature oxide dielectric films for TFT applications. Advanced Materials Interfaces, 1(8), Article 1400206. https://doi.org/10.1002/admi.201400206

Journal Article Type Article
Publication Date Nov 1, 2014
Deposit Date Oct 10, 2014
Publicly Available Date Mar 28, 2024
Journal Advanced Materials Interfaces
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 1
Issue 8
Article Number 1400206
DOI https://doi.org/10.1002/admi.201400206
Keywords UV-assisted annealing, Gate insulator, Oxide dielectrics, Metal nitrate, ZnO TFT.

Files

Accepted Journal Article (840 Kb)
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Copyright Statement
This is the peer reviewed version of the following article: Hwang, J., Lee, K., Jeong, Y., Lee, Y. U., Pearson, C., Petty, M. C., Kim, H. (2014). UV-Assisted Low Temperature Oxide Dielectric Films for TFT Applications, Advanced Materials Interfaces, 1 (8): 1400206, which has been published in final form at http://dx.doi.org/10.1002/admi.201400206. This article may be used for non-commercial purposes in accordance With Wiley-VCH Terms and Conditions for self-archiving.





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