Hwang, J. and Lee, K. and Jeong, J. and Lee, Y.U. and Pearson, C. and Petty, M.C. and Kim, H. (2014) 'UV-assisted low temperature oxide dielectric films for TFT applications.', Advanced materials interfaces., 1 (8). p. 1400206.
Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annealing at 150 °C. The leakage current densities of ZrO2 and Al2O3 dielectrics are less than about 10-9 A/cm2 at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm2/V.s and an off-current density of 10-12 A/cm2. This low fabrication temperature process is compatible with future plastic electronics technology.
|Keywords:||UV-assisted annealing, Gate insulator, Oxide dielectrics, Metal nitrate, ZnO TFT.|
|Full text:||(AM) Accepted Manuscript|
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|Publisher Web site:||http://dx.doi.org/10.1002/admi.201400206|
|Publisher statement:||This is the peer reviewed version of the following article: Hwang, J., Lee, K., Jeong, Y., Lee, Y. U., Pearson, C., Petty, M. C., Kim, H. (2014). UV-Assisted Low Temperature Oxide Dielectric Films for TFT Applications, Advanced Materials Interfaces, 1 (8): 1400206, which has been published in final form at http://dx.doi.org/10.1002/admi.201400206. This article may be used for non-commercial purposes in accordance With Wiley-VCH Terms and Conditions for self-archiving.|
|Record Created:||13 Oct 2014 09:50|
|Last Modified:||30 Aug 2015 00:31|
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