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UV-assisted low temperature oxide dielectric films for TFT applications.

Hwang, J. and Lee, K. and Jeong, J. and Lee, Y.U. and Pearson, C. and Petty, M.C. and Kim, H. (2014) 'UV-assisted low temperature oxide dielectric films for TFT applications.', Advanced materials interfaces., 1 (8). p. 1400206.


Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annealing at 150 °C. The leakage current densities of ZrO2 and Al2O3 dielectrics are less than about 10-9 A/cm2 at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm2/V.s and an off-current density of 10-12 A/cm2. This low fabrication temperature process is compatible with future plastic electronics technology.

Item Type:Article
Keywords:UV-assisted annealing, Gate insulator, Oxide dielectrics, Metal nitrate, ZnO TFT.
Full text:(AM) Accepted Manuscript
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Publisher statement:This is the peer reviewed version of the following article: Hwang, J., Lee, K., Jeong, Y., Lee, Y. U., Pearson, C., Petty, M. C., Kim, H. (2014). UV-Assisted Low Temperature Oxide Dielectric Films for TFT Applications, Advanced Materials Interfaces, 1 (8): 1400206, which has been published in final form at This article may be used for non-commercial purposes in accordance With Wiley-VCH Terms and Conditions for self-archiving.
Record Created:13 Oct 2014 09:50
Last Modified:30 Aug 2015 00:31

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