Sinha, S. and Rothe, C. and Guntner, R. and Scherf, U. and Monkman, A. P. (2003) 'Electrophosphorescence and delayed electroluminescence from pristine polyfluorene thin-film devices at low temperature.', Physical review letters., 90 (12). p. 127402.
Intrinsic long-lived electrophosphorescence and delayed electroluminescence from a conjugated polymer (polyfluorene) thin film is observed for the first time at low temperature. From bias offset voltage dependent measurements, it is concluded that the delayed fluorescence is generated via triplet-triplet annihilation. A fast and efficient triplet exciton quenching by charge carriers is found to occur in the active polymer layer of the working devices.
|Additional Information:||First observation of intrinsic triplet exciton polaron quenching in working polymer light emitting diodes and further long lived emissive trap states in such devices.|
|Keywords:||Light-emitting diodes, Pi-conjugated polymers, Energy-transfer, Triplet energy, Singlet, Performance, Morphology, Dopants.|
|Full text:||(VoR) Version of Record|
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|Publisher Web site:||http://dx.doi.org/10.1103/PhysRevLett.90.127402|
|Publisher statement:||© 2003 by The American Physical Society. All rights reserved.|
|Record Created:||27 Nov 2006|
|Last Modified:||13 Sep 2010 14:23|
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