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Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials

Lee, M.-W.; Pearson, C.; Moon, T.J.; Fisher, A.L.; Petty, M.C.

Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials Thumbnail


Authors

M.-W. Lee

C. Pearson

T.J. Moon

A.L. Fisher

M.C. Petty



Abstract

We report on the effects of device processing conditions, and of changing the electrode materials, on the switching and negative differential resistance (NDR) behaviour of metal/organic thin film/metal structures. The organic material was an ambipolar molecule containing both electron transporting (oxadiazole) and hole transporting (carbazole) chemical groups. Switching and NDR effects are observed for device architectures with both electrodes consisting of aluminium; optimized switching behaviour is achieved for structures incorporating gold nanoparticles. If one of the Al electrodes is replaced by a higher work function metal or coated with an electron-blocking layer, switching and NDR are no longer observed. The results are consistent with a model based on the creation and destruction of Al filaments within the thin organic layer.

Citation

Lee, M., Pearson, C., Moon, T., Fisher, A., & Petty, M. (2014). Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials. Journal of Physics D: Applied Physics, 47(48), https://doi.org/10.1088/0022-3727/47/48/485103

Journal Article Type Article
Publication Date Dec 3, 2014
Deposit Date Nov 14, 2014
Publicly Available Date Mar 29, 2024
Journal Journal of Physics D: Applied Physics
Print ISSN 0022-3727
Electronic ISSN 1361-6463
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 47
Issue 48
DOI https://doi.org/10.1088/0022-3727/47/48/485103

Files

Accepted Journal Article (1.7 Mb)
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Copyright Statement
© 2014 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0022-3727/47/48/485103.





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