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Improving metal-oxide-metal (MOM) diode performance via the optimization of the oxide layer

Dodd, L.E.; Shenton, S.A.; Gallant, A.J.; Wood, D.

Improving metal-oxide-metal (MOM) diode performance via the optimization of the oxide layer Thumbnail


Authors

L.E. Dodd

D. Wood



Abstract

Small area metal-oxide-metal (MOM) diodes are being investigated in many research groups for the detection of THz frequency radiation. In order to create a high-speed rectifying device, the central oxide layer of the MOM structure must be thin and have known physical characteristics. The thickness, structure and uniformity of the oxide can be controlled during the fabrication process. In the work presented here, the effects of both oxygen plasma concentration and annealing temperature during fabrication of Ti/TiOₓ/Pt MOM diodes have been explored. It has been found that, by reducing the oxygen gas concentration from previous work, the TiOₓ layer can be more repeatable and uniform. Furthermore, for an anneal temperature up to a threshold temperature in the 200℃ to 250℃ range, the performance of the diodes is excellent, with a value of zero-bias curvature coefficient (CCZB) that can be up to 4.6V⁻¹. For higher temperature treatments, the value of CCZB decreases to a maximum of 2.0V⁻¹. Similar trends in AC tests can be seen for voltage and current responsivity values.

Citation

Dodd, L., Shenton, S., Gallant, A., & Wood, D. (2015). Improving metal-oxide-metal (MOM) diode performance via the optimization of the oxide layer. Journal of Electronic Materials, 44(5), 1361-1366. https://doi.org/10.1007/s11664-015-3624-9

Journal Article Type Article
Acceptance Date Jan 4, 2015
Online Publication Date Jan 31, 2015
Publication Date May 1, 2015
Deposit Date Jan 8, 2015
Publicly Available Date Mar 29, 2024
Journal Journal of Electronic Materials
Print ISSN 0361-5235
Electronic ISSN 1543-186X
Publisher Springer
Peer Reviewed Peer Reviewed
Volume 44
Issue 5
Pages 1361-1366
DOI https://doi.org/10.1007/s11664-015-3624-9
Keywords High speed, MOM, Metal-oxide-metal, Diode, Diodes, Terahertz, Rectification,THz, Plasma oxidation, Annealing, ToFSIMS, Responsivity, AFM, Curvature coefficient.

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