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Defect energy levels in HfO2 high-dielectric-constant gate oxide.

Xiong, K. and Robertson, J. and Gibson, M. C. and Clark, S. J. (2005) 'Defect energy levels in HfO2 high-dielectric-constant gate oxide.', Applied physics letters., 87 (18). p. 183505.

Abstract

This letter presents calculations of the energy levels of the oxygen vacancy and oxygen interstitial defects in HfO2 using density functional methods that do not need an empirical band gap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level nearer the HfO2 conduction band and just above the Si gap, depending on its charge state. It is identified as the main electron trap in HfO2. The oxygen interstitial gives levels just above the oxide valence band.

Item Type:Article
Keywords:Threshold voltage instabilities, Band offsets, Stacks, Resonance, Centers, System, Films, Gaps.
Full text:PDF - Published Version (71Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.2119425
Publisher statement:Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. Xiong, K. and Robertson, J. and Gibson, M. C. and Clark, S. J. (2005) 'Defect energy levels in HfO2 high-dielectric-constant gate oxide.', Applied physics letters., 87 (18). p. 183505. and may be found at http://link.aip.org/link/?apl/87/183505
Record Created:04 Dec 2006
Last Modified:21 Apr 2011 13:12

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