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Development of Phase Shift Lithography for the Production of Metal-Oxide-Metal Diodes

Dodd, L.E.; Rosamond, M.C.; Gallant, A.J.; Wood, D.

Development of Phase Shift Lithography for the Production of Metal-Oxide-Metal Diodes Thumbnail


Authors

L.E. Dodd

M.C. Rosamond

D. Wood



Abstract

Metal-oxide-metal (MOM) diodes have been produced by combining two novel techniques: a reactive ion etche and subsequent plasma oxidation, and a phase shift lithography process. This has resulted in a significant reduction in device feature sizes, down to sub-micron dimensions and with an improved zero voltage curvature coefficient of up to 2.8 V-1 for the associated diodes. Given the use of MOM diodes in high speed rectification applications, the combination of the reduction in diode area as well as the controlled oxide growth aims to assist in the improved cutoff frequency of the devices, thus ensuring the potential for high speed applications.

Citation

Dodd, L., Rosamond, M., Gallant, A., & Wood, D. (2014). Development of Phase Shift Lithography for the Production of Metal-Oxide-Metal Diodes. Micro and Nano Letters, 9(7), 437-440. https://doi.org/10.1049/mnl.2014.0102

Journal Article Type Article
Publication Date Jul 1, 2014
Deposit Date Apr 16, 2014
Publicly Available Date Mar 29, 2024
Journal Micro and Nano Letters
Publisher Institution of Engineering and Technology (IET)
Peer Reviewed Peer Reviewed
Volume 9
Issue 7
Pages 437-440
DOI https://doi.org/10.1049/mnl.2014.0102
Keywords MIM devices, Diodes, Lithography, Oxidation, Phase shifting masks, Plasma materials processing, Rectification, Sputter etching.

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Accepted Journal Article (773 Kb)
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Copyright Statement
This paper is a postprint of a paper submitted to and accepted for publication in Micro and Nano Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library.





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