Pablo Cubillas
Crystal growth of MOF-5 using secondary building units studied by in situ atomic force microscopy
Cubillas, Pablo; Etherington, Kimberley; Anderson, Michael W.; Attfield, Martin P.
Authors
Kimberley Etherington
Michael W. Anderson
Martin P. Attfield
Abstract
Crystal growth of the metal–organic framework, MOF-5, using basic zinc benzoate, [Zn4O(O2CC6H5)6], was studied in real time using atomic force microscopy. The two-dimensional nuclei involved in layer growth were found to form by a two-step process whereby 1,4-benzenedicarboxylate units first attach to the MOF-5 surface followed by addition of a layer of Zn species and connecting 1,4-benzenedicarboxylate units. No evidence of a growth mechanism involving nucleophilic substitution of a benzoate group from an intact [Zn4O(O2CC6H5)6] molecule by a surface attached 1,4-benzenedicarboxylate unit was found. This indicates that the [Zn4O(O2CC6H5)6] molecules undergo a degree of dissociation before incorporation into the MOF-5 framework. The [Zn4O(O2CC6H5)6]-containing growth solutions were found to influence the relative growth rates along different crystallographic directions and to lead to a faster nucleation rate under certain conditions when compared to growth solutions containing simpler zinc salts. This suggests a degree of remnant association of the zinc species derived from the [Zn4O(O2CC6H5)6] cluster during crystal growth under these conditions.
Citation
Cubillas, P., Etherington, K., Anderson, M. W., & Attfield, M. P. (2014). Crystal growth of MOF-5 using secondary building units studied by in situ atomic force microscopy. CrystEngComm, 16(42), 9834-9841. https://doi.org/10.1039/c4ce01710b
Journal Article Type | Article |
---|---|
Acceptance Date | Sep 10, 2014 |
Online Publication Date | Sep 11, 2014 |
Publication Date | Nov 1, 2014 |
Deposit Date | Jan 15, 2015 |
Publicly Available Date | Jan 21, 2015 |
Journal | CrystEngComm |
Publisher | Royal Society of Chemistry |
Peer Reviewed | Peer Reviewed |
Volume | 16 |
Issue | 42 |
Pages | 9834-9841 |
DOI | https://doi.org/10.1039/c4ce01710b |
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