Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors

Jeong, Y.; Pearson, C.; Kim, H.-G.; Park, M.-Y.; Kim, H.; Do, L.-M.; Petty, M.C.

doi:10.1039/c5ra02989a

Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors

Jeong, Y.; Pearson, C.; Kim, H.-G.; Park, M.-Y.; Kim, H.; Do, L.-M.; Petty, M.C.

Authors

Y. Jeong

C. Pearson

H.-G. Kim

M.-Y. Park

H. Kim

L.-M. Do

M.C. Petty

Abstract

We report on the low-temperature formation (180 °C) of a SiO2 dielectric layer from solution-processed perhydropolysilazane. A bottom-gate zinc oxide thin-film transistor has subsequently been fabricated that possesses a carrier mobility of 3 cm2 V s−1, an on/off ratio of 107 and minimal hysteresis in its transfer and output characteristics.

Citation

Jeong, Y., Pearson, C., Kim, H., Park, M., Kim, H., Do, L., & Petty, M. (2015). Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors. RSC Advances, 5(45), 36083-36087. https://doi.org/10.1039/c5ra02989a

Journal Article Type	Article
Acceptance Date	Apr 15, 2015
Publication Date	Apr 15, 2015
Deposit Date	Apr 23, 2015
Publicly Available Date	Apr 15, 2016
Journal	RSC Advances
Publisher	Royal Society of Chemistry
Peer Reviewed	Peer Reviewed
Volume	5
Issue	45
Pages	36083-36087
DOI	https://doi.org/10.1039/c5ra02989a