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Cdsxte1-x : bulk vapour growth, twin formation and the electrical activity of twin boundaries.

Durose, K. and Yates, A. J. W. and Szczerbakow, A. and Domagala, J. and Golacki, Z. and Swiatek, K. (2002) 'Cdsxte1-x : bulk vapour growth, twin formation and the electrical activity of twin boundaries.', Journal of physics D : applied physics., 35 (16). pp. 1997-2007.


CdSxTe1-x has been used as a model substance to investigate crystal growth from the vapour, twinning phenomena and the electrical properties of grain boundaries. A self-selecting vapour growth method produced solid solutions of CdSxTe1-x (x approximate to 0.067) with compositional uniformity of <2% of x (i.e. <0.0013) as determined by x-ray diffraction and photoluminescence spectroscopy. The CdSxTe1-x crystals were highly twinned. Statistical tests showed that the twin boundaries are spatially correlated. A model for twin formation based on nucleation and grain size development is proposed. Band bending at grain and twin boundaries in CdTe and in CdSxTe1-x was measured using the scanning electron microscope remote electron beam induced current technique. Boundaries in CdTe have downward band bending, but those in CdSxTe1-x have upward band bending. Decoration of grain boundaries with Te inclusions reduced the band bending effect in CdTe. It is postulated that the grain boundary passivation in CdTe/CdS solar cells is partly caused by enrichment of the grain boundaries in CdTe with CdSxTe1-x and partly by the Te enrichment that occurs during processing.

Item Type:Article
Keywords:CDTE Pseudobinary system, CDS/CDTE solar-cells, Grain-boundaries, Phase-diagram, Semiconductors, Crystals, CDCL2.
Full text:Full text not available from this repository.
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Record Created:13 Dec 2006
Last Modified:05 May 2015 17:05

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