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Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs).

Herbert, D. C. and Uren, M. J. and Hughes, B. T. and Hayes, D. G. and Birbeck, J. C. H. and Balmer, R. and Martin, T. and Crow, G. C. and Abram, R. A. and Walmsley, M. and Davies, R. A. and Wallis, R. H. and Phillips, W. A. and Jones, S. (2002) 'Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs).', Journal of physics : condensed matter., 14 (13). pp. 3479-3497.

Abstract

Self-consistent Monte Carlo simulations are reported for AlGaN/GaN HFETs. Hot-carrier scattering rates are determined by fitting experimental ionization coefficients and the doping character of the GaN is obtained from substrate bias measurements. Preliminary simulations for a simple model of the AlGaN surface are described and results are found to be consistent with experimental data. The high-frequency response of short-gate-length transistors is found to be sensitive to the charge state of the free AlGaN surface and it is proposed that current-slump phenomena may also be related to deep levels at this surface. Breakdown calculations show interesting two-dimensional effects close to the drain contact.

Item Type:Article
Keywords:Electron-transport, Breakdown voltage, GAN, Nitride, Impact.
Full text:Full text not available from this repository.
Publisher Web site:http://dx.doi.org/10.1088/0953-8984/14/13/307
Record Created:13 Dec 2006
Last Modified:29 Apr 2009 10:07

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