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Parametric analysis of micromachined reflex klystrons for operation at millimeter and submillimeter wavelengths

García-García, J.; Martín, F.; Miles, R.E.; Steenson, D.P.; Chamberlain, J.M.; Fletcher, J.R.; Thorpe, J.R.

Authors

J. García-García

F. Martín

R.E. Miles

D.P. Steenson

J.M. Chamberlain

J.R. Fletcher

J.R. Thorpe



Abstract

A tool for the simulation of high frequency reflex klystrons is presented. Based on the Monte Carlo technique, this simulation includes loss mechanisms (due to the opacity of the grids) and takes into account the main peculiarities expected for device operation at millimeter and submillimeter wave frequencies. The tool has been used to study the effects of device parameters which are critical to the optimization of output power in a prototype 100 GHz micromachined structure based on a field emission electron source, namely, the electric field in the drift region and the grid distance. The results also show that this device can be used for direct generation of useful amounts of power at these frequencies.

Citation

García-García, J., Martín, F., Miles, R., Steenson, D., Chamberlain, J., Fletcher, J., & Thorpe, J. (2002). Parametric analysis of micromachined reflex klystrons for operation at millimeter and submillimeter wavelengths. Journal of Applied Physics, 92(11), 6900-6904. https://doi.org/10.1063/1.1519955

Journal Article Type Article
Acceptance Date Sep 18, 2002
Online Publication Date Dec 1, 2002
Publication Date Dec 1, 2002
Deposit Date Dec 13, 2006
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 92
Issue 11
Pages 6900-6904
DOI https://doi.org/10.1063/1.1519955
Keywords Klystrons, Digital simulation, Optimisation, Monte Carlo methods, Millimetre wave oscillators, Submillimetre wave oscillators, Micromachining, Vacuum microelectronics.