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The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by ‘contactless’ physical vapour transport.

Palosz, W. and Grasza, K. and Durose, K. and Halliday, D. P. and Boyall, N. M. and Dudley, M. and Raghothamachar, B. and Cai, L. (2003) 'The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by ‘contactless’ physical vapour transport.', Journal of crystal growth., 254 (3-4). pp. 316-328.

Abstract

A series of cadmium telluride crystals grown by physical vapour transport without contact with the ampoule walls and cooled at different rates were characterized using synchrotron X-ray topography, photoluminescence, and chemical etching. Strain from sticking to silica glass and its effect on the dislocation density is shown. It was found that very fast cool-down (e.g. air or water quenching) increases dislocation density by at least one order of magnitude. None of the samples had random dislocation distributions, but coarse clumping of dislocations on the scale of more than 100 μm was more prevalent in slowly cooled crystals. Photoluminescence revealed that slow cooling (e.g. 10°C/h) favoured the donor–acceptor luminescence involving complex A centres. This was diminished in fast-cooled material, an effect presumed to be due to dislocation gettering. Fast cooling also enhanced the formation of shallow acceptors. Implications for Bridgman growth of CdTe and the vapour growth of CdZnTe are discussed briefly.

Item Type:Article
Additional Information:
Keywords:Cool-down, Defects, Dislocation distribution, Synchrotron white beam x-ray topography.
Full text:Full text not available from this repository.
Publisher Web site:http://dx.doi.org/10.1016/S0022-0248(03)01183-7
Record Created:15 Dec 2006
Last Modified:08 Apr 2009 16:26

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