Cookies

We use cookies to ensure that we give you the best experience on our website. By continuing to browse this repository, you give consent for essential cookies to be used. You can read more about our Privacy and Cookie Policy.


Durham Research Online
You are in:

Behavior of hydrogen in wide band gap oxides.

Xiong, K. and Robertson, J. and Clark, S.J. (2007) 'Behavior of hydrogen in wide band gap oxides.', Journal of applied physics., 102 (8). 083710.

Abstract

The energy levels of interstitial hydrogen in various wide band gap oxides are calculated using a density function based method that does not need a band gap correction. The positive charge state has a large stabilization energy due to the formation of an O–H bond. The hydrogen level is found to be shallow in CdO, ZrO2, HfO2, La2O3, LaAlO3, SnO2, TiO2, SrTiO3, PbTiO3, and SrBi2Ta2O9, but deep in MgO, Al2O3, SiO2, ZrSiO4, HfSiO4, and SrZrO3. It is borderline in SrO. The predictions are found to agree well with the experimental behavior of muonium in these oxides.

Item Type:Article
Full text:(VoR) Version of Record
Download PDF
(2656Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.2798910
Publisher statement:© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 102, 083710 (2007) and may be found at http://dx.doi.org/10.1063/1.2798910
Record Created:18 Aug 2015 10:20
Last Modified:18 Aug 2015 14:13

Social bookmarking: del.icio.usConnoteaBibSonomyCiteULikeFacebookTwitterExport: EndNote, Zotero | BibTex
Look up in GoogleScholar | Find in a UK Library