Defect energy levels in HfO2 high-dielectric-constant gate oxide

Xiong, K.; Robertson, J.; Gibson, M.C.; Clark, S.J.

doi:10.1063/1.2119425

Defect energy levels in HfO2 high-dielectric-constant gate oxide

Xiong, K.; Robertson, J.; Gibson, M.C.; Clark, S.J.

Authors

K. Xiong

J. Robertson

M.C. Gibson

Professor Stewart Clark s.j.clark@durham.ac.uk
Professor

Abstract

This letter presents calculations of the energy levels of the oxygen vacancy and oxygen interstitial defects in HfO2 using density functional methods that do not need an empirical band gap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level nearer the HfO2conduction band and just above the Si gap, depending on its charge state. It is identified as the main electron trap in HfO2. The oxygen interstitial gives levels just above the oxide valence band.

Citation

Xiong, K., Robertson, J., Gibson, M., & Clark, S. (2005). Defect energy levels in HfO2 high-dielectric-constant gate oxide. Applied Physics Letters, 87(18), Article 183505. https://doi.org/10.1063/1.2119425

Journal Article Type	Article
Acceptance Date	Sep 1, 2005
Publication Date	Oct 31, 2005
Deposit Date	Jan 31, 2012
Publicly Available Date	Aug 18, 2015
Journal	Applied Physics Letters
Print ISSN	0003-6951
Electronic ISSN	1077-3118
Publisher	American Institute of Physics
Peer Reviewed	Peer Reviewed
Volume	87
Issue	18
Article Number	183505
DOI	https://doi.org/10.1063/1.2119425

Files

Published Journal Article (431 Kb)
PDF

Copyright Statement
© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 87, 183505 (2005) and may be found at http://dx.doi.org/10.1063/1.2119425