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Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1

Stanley, C.R.; Holland, M.C.; Kean, A.H.; Stanaway, M.B.; Grimes, R.T.; Chamberlain, J.M.

Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1 Thumbnail


Authors

C.R. Stanley

M.C. Holland

A.H. Kean

M.B. Stanaway

R.T. Grimes

J.M. Chamberlain



Abstract

The effect of varying the temperature (T cr) of an As4→As2 cracker furnace between 600 and 700 °C on the properties of GaAs grown by molecular beam epitaxy has been evaluated using 4–300 K Hall measurements and 4.2 K far‐infrared photoconduction spectroscopy, in an extension of earlier work on high‐mobility material (Ref. 1). The residual donors are silicon and sulphur with mid‐1013 cm−3 concentrations under As2‐growth conditions (T cr=700 °C). By lowering T cr, the silicon concentration is reduced substantially, leaving sulphur as the principal impurity. A 15‐μm‐thick layer grown with T cr=650 °C has measured free‐electron densities of ≊2.8×1013 cm−3 and peak mobilities ≊4×105 cm2 V−1 s−1 at ≊28–42 K, the highest ever recorded in bulk GaAs.

Citation

Stanley, C., Holland, M., Kean, A., Stanaway, M., Grimes, R., & Chamberlain, J. (1991). Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1. Applied Physics Letters, 58(5), 478-480. https://doi.org/10.1063/1.104613

Journal Article Type Article
Publication Date Feb 4, 1991
Deposit Date Aug 18, 2015
Publicly Available Date Mar 29, 2024
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 58
Issue 5
Pages 478-480
DOI https://doi.org/10.1063/1.104613

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Copyright Statement
© 1991 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 58, 478 (1991) and may be found at http://dx.doi.org/10.1063/1.104613





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