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Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates

Hopf, T.; Vassilevski, K.; Escobedo-Cousin, E.; King, P.; Wright, N.G.; O'Neill, A.G.; Horsfall, A.B.; Goss, J.; Wells, G.; Hunt, M.

Authors

T. Hopf

K. Vassilevski

E. Escobedo-Cousin

P. King

N.G. Wright

A.G. O'Neill

A.B. Horsfall

J. Goss

G. Wells



Abstract

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3 was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3 over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.

Citation

Hopf, T., Vassilevski, K., Escobedo-Cousin, E., King, P., Wright, N., O'Neill, A., …Hunt, M. (2015). Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates. Materials Science Forum, 821-823, 937-940. https://doi.org/10.4028/www.scientific.net/msf.821-823.937

Journal Article Type Article
Acceptance Date Jan 21, 2015
Publication Date Jun 1, 2015
Deposit Date Aug 13, 2015
Journal Materials Science Forum
Print ISSN 0255-5476
Publisher Trans Tech Publications
Peer Reviewed Peer Reviewed
Volume 821-823
Pages 937-940
DOI https://doi.org/10.4028/www.scientific.net/msf.821-823.937
Keywords AFM, ALD, Epitaxial Graphene, Graphene Field-Effect Transistors, Raman Spectroscopy, STM


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