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Generation of terahertz radiation by AlGaAs nanowires

Trukhin, V.N.; Buyskih, A.S.; Bouravlev, A.D.; Mustafa, I.A.; Samsonenko, Yu. B.; Trukhin, A.V.; Cirlin, G.E.; Kaliteevski, M.A.; Zeze, D.A.; Gallant, A.J.

Generation of terahertz radiation by AlGaAs nanowires Thumbnail


Authors

V.N. Trukhin

A.S. Buyskih

A.D. Bouravlev

I.A. Mustafa

Yu. B. Samsonenko

A.V. Trukhin

G.E. Cirlin

M.A. Kaliteevski



Abstract

Terahertz emission by AlGaAs nanowires grown on a GaAs substrate under excitation by femtosecond optical pulses has been observed. It is demonstrated that THz emission occurs via excitation of photocurrent in the nanowires. The dynamics of photoinduced charge carriers is studied via the influence of an electron—hole plasma on terahertz radiation. It is shown that the capture of charge carriers on vacancies, which exist at the boundaries of nanowires, on the interfaces between cubic and hexagonal phase in nanowires, leads to an increase in the efficiency of terahertz emission.

Citation

Trukhin, V., Buyskih, A., Bouravlev, A., Mustafa, I., Samsonenko, Y. B., Trukhin, A., …Gallant, A. (2015). Generation of terahertz radiation by AlGaAs nanowires. JETP Letters, 102(5), 316-320. https://doi.org/10.1134/s0021364015170129

Journal Article Type Article
Acceptance Date Aug 25, 2015
Online Publication Date Nov 14, 2015
Publication Date Sep 1, 2015
Deposit Date Dec 7, 2015
Publicly Available Date Mar 28, 2024
Journal JETP Letters
Print ISSN 0021-3640
Electronic ISSN 1090-6487
Publisher Springer
Peer Reviewed Peer Reviewed
Volume 102
Issue 5
Pages 316-320
DOI https://doi.org/10.1134/s0021364015170129

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