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Densification of a-IGZO with low-temperature annealing for flexible electronics applications

Troughton, J.; Downs, P.; Price, R.; Atkinson, D.

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Authors

J. Troughton

P. Downs

R. Price



Abstract

Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 °C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption.

Citation

Troughton, J., Downs, P., Price, R., & Atkinson, D. (2017). Densification of a-IGZO with low-temperature annealing for flexible electronics applications. Applied Physics Letters, 110(1), Article 011903. https://doi.org/10.1063/1.4973629

Journal Article Type Article
Acceptance Date Dec 22, 2016
Online Publication Date Jan 4, 2017
Publication Date Jan 4, 2017
Deposit Date Jan 16, 2017
Publicly Available Date Jan 4, 2018
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 110
Issue 1
Article Number 011903
DOI https://doi.org/10.1063/1.4973629

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Copyright Statement
© 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Troughton, J. and Downs, P. and Price, R. and Atkinson, D. (2017) 'Densification of a-IGZO with low-temperature annealing for flexible electronics applications.', Applied physics letters., 110 (1), 011903 and may be found at https://doi.org/10.1063/1.4973629





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