Selective reflection from an Rb layer with a thickness below λ/12 and applications

Sargsyan, Armen; Papoyan, Aram; Hughes, Ifan G.; Adams, Charles S.; Sarkisyan, David

doi:10.1364/ol.42.001476

Selective reflection from an Rb layer with a thickness below λ/12 and applications

Sargsyan, Armen; Papoyan, Aram; Hughes, Ifan G.; Adams, Charles S.; Sarkisyan, David

Authors

Armen Sargsyan

Aram Papoyan

Professor Ifan Hughes i.g.hughes@durham.ac.uk
Professor

Charles S. Adams

David Sarkisyan

Abstract

We have studied the peculiarities of selective reflection from an Rb vapor cell with a thickness L < 70 nm, which is smaller than the length scale of evanescent fields λ∕2π and more than an order of magnitude smaller than the optical wavelength. A 240 MHz redshift due to the atom-surface interaction is observed for a cell thickness of L 40 nm. In addition, complete frequency-resolved hyperfine Paschen– Back splitting of atomic transitions to four components for 87Rb and six components for 87Rb is recorded in a strong magnetic field (B > 2 kG).

Citation

Sargsyan, A., Papoyan, A., Hughes, I. G., Adams, C. S., & Sarkisyan, D. (2017). Selective reflection from an Rb layer with a thickness below λ/12 and applications. Optics Letters, 42(8), 1476-1479. https://doi.org/10.1364/ol.42.001476

Journal Article Type	Article
Acceptance Date	Mar 14, 2017
Online Publication Date	Apr 4, 2017
Publication Date	Apr 4, 2017
Deposit Date	May 17, 2017
Publicly Available Date	Apr 4, 2018
Journal	Optics Letters
Print ISSN	0146-9592
Electronic ISSN	1539-4794
Publisher	Optica
Peer Reviewed	Peer Reviewed
Volume	42
Issue	8
Pages	1476-1479
DOI	https://doi.org/10.1364/ol.42.001476

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