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Enhanced electric field sensitivity of rf-dressed Rydberg dark states

Bason, MG; Tanasittikosol, M; Sargsyan, A; Mohapatra, AK; Sarkisyan, D; Potvliege, RM; Adams, CS

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Authors

MG Bason

M Tanasittikosol

A Sargsyan

AK Mohapatra

D Sarkisyan



Abstract

Optical detection of Rydberg states using electromagnetically induced transparency (EIT) enables continuous measurement of electric fields in a confined geometry. In this paper, we demonstrate the formation of radio frequency (rf)-dressed EIT resonances in a thermal Rb vapour and show that such states exhibit enhanced sensitivity to dc electric fields compared to their bare counterparts. Fitting the corresponding EIT profile enables precise measurements of the dc field independent of laser frequency fluctuations. Our results suggest that space charges within the enclosed cell reduce electric field inhomogeneities within the interaction region.

Citation

Bason, M., Tanasittikosol, M., Sargsyan, A., Mohapatra, A., Sarkisyan, D., Potvliege, R., & Adams, C. (2010). Enhanced electric field sensitivity of rf-dressed Rydberg dark states. New Journal of Physics, 12, Article 065015. https://doi.org/10.1088/1367-2630/12/6/065015

Journal Article Type Article
Online Publication Date Jun 28, 2010
Publication Date Jun 28, 2010
Deposit Date Feb 21, 2012
Publicly Available Date Mar 29, 2024
Journal New Journal of Physics
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 12
Article Number 065015
DOI https://doi.org/10.1088/1367-2630/12/6/065015

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