Role of charge traps in the performance of atomically thin transistors

Amit, Iddo; Octon, Tobias J; Townsend, Nicola J; Reale, Francesco; Wright, C David; Mattevi, Cecilia; Craciun, Monica F; Russo, Saverio

doi:10.1002/adma.201605598

Role of charge traps in the performance of atomically thin transistors

Amit, Iddo; Octon, Tobias J; Townsend, Nicola J; Reale, Francesco; Wright, C David; Mattevi, Cecilia; Craciun, Monica F; Russo, Saverio

Authors

Dr Iddo Amit iddo.amit@durham.ac.uk
Assistant Professor

Tobias J Octon

Nicola J Townsend

Francesco Reale

C David Wright

Cecilia Mattevi

Monica F Craciun

Saverio Russo

Abstract

Transient currents in atomically thin MoTe2 field‐effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge‐trapping dynamics that renders a time‐dependent change in the threshold voltage as the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin‐based devices. Hence, the model is vital to the intelligent design of fast and highly efficient optoelectronic devices.

Citation

Amit, I., Octon, T. J., Townsend, N. J., Reale, F., Wright, C. D., Mattevi, C., …Russo, S. (2017). Role of charge traps in the performance of atomically thin transistors. Advanced Materials, 29(19), Article 1605598. https://doi.org/10.1002/adma.201605598

Journal Article Type	Article
Acceptance Date	Feb 6, 2017
Online Publication Date	Mar 15, 2017
Publication Date	Mar 15, 2017
Deposit Date	Jul 5, 2018
Publicly Available Date	Jul 6, 2018
Journal	Advanced Materials
Print ISSN	0935-9648
Electronic ISSN	1521-4095
Publisher	Wiley
Peer Reviewed	Peer Reviewed
Volume	29
Issue	19
Article Number	1605598
DOI	https://doi.org/10.1002/adma.201605598

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Copyright Statement
© 2017 The Authors. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.