Amit, Iddo and Englander, Danny and Horvitz, Dror and Sasson, Yaniv and Rosenwaks, Yossi (2014) 'Density and energy distribution of interface states in the grain boundaries of polysilicon nanowire.', Nano letters., 14 (11). pp. 6190-6194.
Wafer-scale fabrication of semiconductor nanowire devices is readily facilitated by lithography-based top-down fabrication of polysilicon nanowire (P-SiNW) arrays. However, free carrier trapping at the grain boundaries of polycrystalline materials drastically changes their properties. We present here transport measurements of P-SiNW array devices coupled with Kelvin probe force microscopy at different applied biases. By fitting the measured P-SiNW surface potential using electrostatic simulations, we extract the longitudinal dopant distribution along the nanowires as well as the density of grain boundaries interface states and their energy distribution within the band gap.
|Full text:||(AM) Accepted Manuscript|
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|Publisher Web site:||https://doi.org/10.1021/nl5024468|
|Publisher statement:||This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/nl5024468.|
|Record Created:||31 Jul 2018 09:43|
|Last Modified:||31 Jul 2018 12:57|
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