Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires

Amit, Iddo; Jeon, Nari; Lauhon, Lincoln J.; Rosenwaks, Yossi

doi:10.1021/acsami.5b07746

Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires

Amit, Iddo; Jeon, Nari; Lauhon, Lincoln J.; Rosenwaks, Yossi

Authors

Dr Iddo Amit iddo.amit@durham.ac.uk
Assistant Professor

Nari Jeon

Lincoln J. Lauhon

Yossi Rosenwaks

Abstract

The modulation between different doping species required to produce a diode in VLS-grown nanowires (NWs) yields a complex doping profile, both axially and radially, and a gradual junction at the interface. We present a detailed analysis of the dopant distribution around the junction. By combining surface potential measurements, performed by KPFM, with finite element simulations, we show that the highly doped (5 × 1019 cm–3) shell surrounding the NW can screen the junction’s built in voltage at shell thickness as low as 3 nm. By comparing NWs with high and low doping contrast at the junction, we show that dopant compensation dramatically decreases the electrostatic width of the junction and results in relatively low leakage currents.

Citation

Amit, I., Jeon, N., Lauhon, L. J., & Rosenwaks, Y. (2016). Impact of Dopant Compensation on Graded p-n Junctions in Si Nanowires. ACS Applied Materials and Interfaces, 8(1), 128-134. https://doi.org/10.1021/acsami.5b07746

Journal Article Type	Article
Acceptance Date	Dec 9, 2015
Online Publication Date	Dec 9, 2015
Publication Date	Jan 13, 2016
Deposit Date	Jul 5, 2018
Publicly Available Date	Jul 31, 2018
Journal	ACS Applied Materials and Interfaces
Print ISSN	1944-8244
Electronic ISSN	1944-8252
Publisher	American Chemical Society
Peer Reviewed	Peer Reviewed
Volume	8
Issue	1
Pages	128-134
DOI	https://doi.org/10.1021/acsami.5b07746

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Copyright Statement
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS applied materials & interface, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see https://doi.org/10.1021/acsami.5b07746.