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Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures.

Paul, S. and Pearson, C. and Molloy, A. and Cousins, M. A. and Green, M. and Kolliopoulou, S. and Dimitrakis, P. and Normand, P. and Tsoukalas, D. and Petty, M. C. (2003) 'Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures.', Nano letters., 3 (4). pp. 533-536.

Abstract

The Langmuir-Blodgett deposition of organically passivated gold nanoparticles is reported. A monolayer of these particles has been incorporated into a metal-insulator-semiconductor (MIS) structure. The MIS device exhibits a hysteresis in its capacitance versus voltage characteristic, the magnitude of which is dependent on the voltage sweep conditions. Charge storage in the layer of nanoparticles is thought to be responsible for this effect.

Item Type:Article
Keywords:Nanocrystals, Storage, Gold.
Full text:Full text not available from this repository.
Publisher Web site:http://dx.doi.org/10.1021/nl034008t
Record Created:29 Aug 2006
Last Modified:17 Sep 2014 11:53

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