Petit, D. and Faulkner, C. C. and Johnstone, S. and Wood, D. and Cowburn, R. P. (2005) 'Nanometer scale patterning using focused ion beam milling.', Review of scientific instruments., 76 (2). 026105.
Abstract
We report on the performance of focused ion beam (FIB) milling in order to produce nanometer scale devices. Resolution issues have been systematically studied as a function of emission current and working distance, by imaging single pixel lines FIB milled into thin bismuth films deposited on oxidized silicon. The ion beam profile has been measured, and by carefully optimizing the milling conditions, 40 nm Hall probe sensors have been fabricated.
| Item Type: | Article |
|---|---|
| Full text: | PDF - Published Version (191Kb) |
| Status: | Peer-reviewed |
| Publisher Web site: | http://dx.doi.org/10.1063/1.1844431 |
| Publisher statement: | Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Petit, D. and Faulkner, C. C. and Johnstone, S. and Wood, D. and Cowburn, R. P. (2005) Nanometer scale patterning using focused ion beam milling. Review of scientific instruments., 76 (2). 3. ISSN 0034-6748) and may be found at http://link.aip.org/link/?rsi/76/026105 |
| Record Created: | 05 Jun 2006 |
| Last Modified: | 21 Apr 2011 12:50 |
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