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Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers

Jin, Jidong; Wang, Lei; Zheng, Zhaoliang; Zhang, Jiawei; Hu, Xuzhi; Lu, Jian R.; Etor, David; Pearson, Chris; Song, Aimin; Wood, David; Gallant, Andrew J.; Balocco, Claudio

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Authors

Jidong Jin

Lei Wang

Zhaoliang Zheng

Jiawei Zhang

Xuzhi Hu

Jian R. Lu

David Etor

Chris Pearson

Aimin Song

David Wood



Abstract

This paper reports on the experimental investigation of metal-insulator-metal (MIM) diodes based on alkyltrichlorosilane self-assembled monolayers (SAMs) with different alkyl chain lengths. The insulating SAM is sandwiched between two metal contacts, Pt and Ti, with different work functions. The electronic properties of the MIM diodes can be tuned by controlling the alkyl chain length of the SAMs to address different constraints in high speed electronics applications. Data fitting of the tunneling current through the MIM junctions using the Fowler-Nordheim model suggests that the device operation is influenced by the barrier heights of the diodes and thicknesses of the SAMs. The current-voltage characteristics achieved in MIM diodes based on alkyltrichlorosilane SAMs make them promising candidates for high speed electronics applications.

Citation

Jin, J., Wang, L., Zheng, Z., Zhang, J., Hu, X., Lu, J. R., …Balocco, C. (2019). Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers. AIP Advances, 9(6), https://doi.org/10.1063/1.5100252

Journal Article Type Article
Acceptance Date Jun 13, 2019
Online Publication Date Jun 21, 2019
Publication Date Jun 21, 2019
Deposit Date Jun 24, 2019
Publicly Available Date Jun 25, 2019
Journal AIP Advances
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 9
Issue 6
DOI https://doi.org/10.1063/1.5100252

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