Polymer Light‐Emitting Transistors With Charge‐Carrier Mobilities Exceeding 1 cm2 V−1 s−1

Chaudhry, M.U.; Panidi, J.; Nam, S.; Smith, A.; Lim, J.; Tezner, K.; Patsalos, P.A.; Vourlias, G.; Sit, W.; Firdaus, Y.; Heeney, M.; Bradley, D.; Anthopoulos, T.D.

doi:10.1002/aelm.201901132

Polymer Light‐Emitting Transistors With Charge‐Carrier Mobilities Exceeding 1 cm2 V−1 s−1

Chaudhry, M.U.; Panidi, J.; Nam, S.; Smith, A.; Lim, J.; Tezner, K.; Patsalos, P.A.; Vourlias, G.; Sit, W.; Firdaus, Y.; Heeney, M.; Bradley, D.; Anthopoulos, T.D.

Authors

Dr Mujeeb Chaudhry mujeeb.u.chaudhry@durham.ac.uk
Associate Professor

J. Panidi

S. Nam

A. Smith

J. Lim

K. Tezner

P.A. Patsalos

G. Vourlias

W. Sit

Y. Firdaus

M. Heeney

D. Bradley

T.D. Anthopoulos

Abstract

The vast majority of conjugated polymer-based light emitting field-effect transistors (LEFETs) are characterized by low charge carrier mobilities typically in the range 10-5 to 10-3 cm2 V-1 s-1 range. Fast carrier transport is a highly desirable characteristic for high frequency LEFET operation and, potentially, for use in electrically-pumped lasers. Unfortunately, high mobility organic semiconductors are often characterised by strong intermolecular π-π interactions that reduce luminescence. Development of new materials and/or device concepts that overcome this hurdle are therefore required. We report single organic semiconductor layer, light-emitting transistors that combine the highest hole mobilities reported to date for any polymer-based LEFET, with encouraging light emission characteristics. We achieve this in a single polymer layer LEFET, which was further enhanced through the use of a small-molecule/conjugated polymer blend system that possesses a film microstructure which supports enhanced charge carrier mobility (3.2 cm2 V-1 s-1) and promising light emission characteristics (1600 cd m-2) as compared to polymer-only based LEFETs. This simple approach represents an attractive strategy to further advance the performance of solution-processed LEFETs.

Citation

Chaudhry, M., Panidi, J., Nam, S., Smith, A., Lim, J., Tezner, K., …Anthopoulos, T. (2020). Polymer Light‐Emitting Transistors With Charge‐Carrier Mobilities Exceeding 1 cm2 V−1 s−1. Advanced Electronic Materials, 6(1), Article 1901132. https://doi.org/10.1002/aelm.201901132

Journal Article Type	Article
Acceptance Date	Oct 29, 2019
Online Publication Date	Nov 25, 2019
Publication Date	Jan 13, 2020
Deposit Date	Nov 13, 2019
Publicly Available Date	Nov 25, 2020
Journal	Advanced Electronic Materials
Publisher	Wiley
Peer Reviewed	Peer Reviewed
Volume	6
Issue	1
Article Number	1901132
DOI	https://doi.org/10.1002/aelm.201901132

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Copyright Statement
This is the accepted version of the following article: Chaudhry, M.U., Panidi, J., Nam, S., Smith, A., Lim, J., Tezner, K., Patsalos, P.A., Vourlias, G., Sit, W., Firdaus, Y., Heeney, M., Bradley, D. & Anthopoulos, T.D. (2020). Polymer Light‐Emitting Transistors With Charge‐Carrier Mobilities Exceeding 1 cm2 V−1 s−1. Advanced Electronic Materials 6(1): 1901132, which has been published in final form at https://doi.org/10.1002/aelm.201901132. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for self-archiving.