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The synthesis and characterisation of Cu₂MX₄ (M = W or Mo; X = S, Se or S/Se) materials prepared by a solvothermal method

Crossland, C.J.; Hickey, P.J.; Evans, J.S.O.

Authors

C.J. Crossland

P.J. Hickey



Abstract

This paper describes the synthesis of a family of layered materials with general formula Cu2MX4 (M = W or Mo; X = S, Se or S/Se) by a solvothermal route. The effect of synthesis temperature has been investigated and found to determine the structural form of the material produced. The structures of all materials have been solved and refined using powder X-ray diffraction. Variable temperature diffraction experiments have been performed on Cu2WS4 and Cu2WSe4. Conductivity measurements show Cu2WSe4 is semiconducting.

Citation

Crossland, C., Hickey, P., & Evans, J. (2005). The synthesis and characterisation of Cu₂MX₄ (M = W or Mo; X = S, Se or S/Se) materials prepared by a solvothermal method. Journal of materials chemistry, 15(34), 3452-3458. https://doi.org/10.1039/b507129a

Journal Article Type Article
Publication Date 2005-07
Deposit Date Apr 20, 2007
Journal Journal of Materials Chemistry
Print ISSN 0959-9428
Electronic ISSN 1364-5501
Publisher Royal Society of Chemistry
Peer Reviewed Peer Reviewed
Volume 15
Issue 34
Pages 3452-3458
DOI https://doi.org/10.1039/b507129a