The synthesis and characterisation of Cu2MX4 (M = W or Mo; X = S, Se or S/Se) materials prepared by a solvothermal method.

Abstract

This paper describes the synthesis of a family of layered materials with general formula Cu2MX4 (M = W or Mo; X = S, Se or S/Se) by a solvothermal route. The effect of synthesis temperature has been investigated and found to determine the structural form of the material produced. The structures of all materials have been solved and refined using powder X-ray diffraction. Variable temperature diffraction experiments have been performed on Cu2WS4 and Cu2WSe4. Conductivity measurements show Cu2WSe4 is semiconducting.