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Raman and finite-element analysis of a mechanically strained silicon microstructure

Bowden, M.; Gardiner, D.J.; Wood, D.; Burdess, J.; Harris, A.; Hedley, J.

Authors

M. Bowden

D.J. Gardiner

D. Wood

J. Burdess

A. Harris

J. Hedley



Abstract

Raman microspectroscopy has been used to determine the volumetric micro-strain distribution in mechanically stressed silicon microstructures. Data are presented as strain images with a spatial resolution of around 0.8 µm. A useful correlation is demonstrated between finite-element analysis calculations of volumetric strain and Raman shift. The results demonstrate that silicon beam structures incorporating a 90° bend will experience a non-uniform stress distribution along the bend radius for small radii of curvature.

Citation

Bowden, M., Gardiner, D., Wood, D., Burdess, J., Harris, A., & Hedley, J. (2001). Raman and finite-element analysis of a mechanically strained silicon microstructure. Journal of Micromechanics and Microengineering, 11(1), 7-12. https://doi.org/10.1088/0960-1317/11/1/302

Journal Article Type Article
Publication Date 2001-01
Deposit Date Jun 8, 2006
Journal Journal of Micromechanics and Microengineering
Print ISSN 0960-1317
Electronic ISSN 1361-6439
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 11
Issue 1
Pages 7-12
DOI https://doi.org/10.1088/0960-1317/11/1/302
Keywords Crystalline silicon, Cubic-crystals, Stress, Spectroscopy, Frequencies, Phonons.
Publisher URL http://www.iop.org/EJ/abstract/0960-1317/11/1/302

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