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Raman and finite-element analysis of a mechanically strained silicon microstructure.

Bowden, M. and Gardiner, D. J. and Wood, D. and Burdess, J. and Harris, A. and Hedley, J. (2001) 'Raman and finite-element analysis of a mechanically strained silicon microstructure.', Journal of micromechanics and microengineering., 11 (1). pp. 7-12.

Abstract

Raman microspectroscopy has been used to determine the volumetric micro-strain distribution in mechanically stressed silicon microstructures. Data are presented as strain images with a spatial resolution of around 0.8 µm. A useful correlation is demonstrated between finite-element analysis calculations of volumetric strain and Raman shift. The results demonstrate that silicon beam structures incorporating a 90° bend will experience a non-uniform stress distribution along the bend radius for small radii of curvature.

Item Type:Article
Keywords:Crystalline silicon, Cubic-crystals, Stress, Spectroscopy, Frequencies, Phonons.
Full text:Full text not available from this repository.
Publisher Web site:http://www.iop.org/EJ/abstract/0960-1317/11/1/302
Record Created:08 Jun 2006
Last Modified:29 Apr 2009 09:51

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