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Terahertz luminescence in strained GaAsN:Be layers under strong electric fields

Shalygin, V.A.; Vorobjev, L.E.; Firsov, D.A.; Panevin, V.Y.; Sofronov, A.N.; Andrianov, A.V.; Zakhar'in, A.O.; Egorov, A.Y.; Gladyshev, A.G.; Bondarenko, O.V.; Ustinov, V.M.; Zinov'ev, N.N.; Kozlov, D.V.

Authors

V.A. Shalygin

L.E. Vorobjev

D.A. Firsov

V.Y. Panevin

A.N. Sofronov

A.V. Andrianov

A.O. Zakhar'in

A.Y. Egorov

A.G. Gladyshev

O.V. Bondarenko

V.M. Ustinov

N.N. Zinov'ev

D.V. Kozlov



Abstract

The authors report on the experimental studies of terahertz emission from strained GaAsN/GaAs microstructures doped with beryllium at the conditions of electric breakdown of the shallow impurity. The terahertz emission spectrum demonstrates several distinctive signatures that are related to spontaneous optical transitions between resonant and localized states of the acceptor. The energy spectrum calculated for the Be acceptor in the GaAsN/GaAs heterostructure fits reasonably well with the experimentally observed peaks.

Citation

Shalygin, V., Vorobjev, L., Firsov, D., Panevin, V., Sofronov, A., Andrianov, A., …Kozlov, D. (2007). Terahertz luminescence in strained GaAsN:Be layers under strong electric fields. Applied Physics Letters, 90(16), Article 161128. https://doi.org/10.1063/1.2730745

Journal Article Type Article
Acceptance Date Mar 23, 2007
Online Publication Date Apr 20, 2007
Publication Date Apr 20, 2007
Deposit Date Jul 16, 2007
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 90
Issue 16
Article Number 161128
DOI https://doi.org/10.1063/1.2730745

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