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Terahertz luminescence in strained GaAsN:Be layers under strong electric fields.

Shalygin, V. A. and Vorobjev, L. E. and Firsov, D. A. and Panevin, V. Y. and Sofronov, A. N. and Andrianov, A. V. and Zakhar'in, A. O. and Egorov, A. Y. and Gladyshev, A. G. and Bondarenko, O. V. and Ustinov, V. M. and Zinov'ev, N. N. and Kozlov, D. V. (2007) 'Terahertz luminescence in strained GaAsN:Be layers under strong electric fields.', Applied physics letters., 90 (16). p. 161128.

Abstract

The authors report on the experimental studies of terahertz emission from strained GaAsN/GaAs microstructures doped with beryllium at the conditions of electric breakdown of the shallow impurity. The terahertz emission spectrum demonstrates several distinctive signatures that are related to spontaneous optical transitions between resonant and localized states of the acceptor. The energy spectrum calculated for the Be acceptor in the GaAsN/GaAs heterostructure fits reasonably well with the experimentally observed peaks.

Item Type:Article
Full text:Full text not available from this repository.
Publisher Web site:http://dx.doi.org/10.1063/1.2730745
Record Created:16 Jul 2007
Last Modified:27 Apr 2011 09:50

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