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Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells

Li, Q.; Xu, S.J.; Li, G.Q.; Dai, D.C.; Che, C.M.

Authors

Q. Li

S.J. Xu

G.Q. Li

D.C. Dai

C.M. Che



Abstract

We report an observation of efficient two-photon photoluminescence (TPL) of InGaN/GaN multi-quantum-well (MQW) structures using broadband femtosecond near-infrared excitation laser. Near quadratic excitation-intensity dependence and asymmetric collinear interferometric autocorrelation trace of the TPL signal unambiguously verify the nonlinearity of the TPL process. We also measured the excitation spectrum of the TPL signal and found that it can be fitted well with the theoretical two-photon absorption coefficient formula for direct wide gap semiconductors. The decay time of the TPL signal was determined using a time-resolved photoluminescence technique. These results demonstrate the strong nonlinear optical property of InGaN/GaN MQWs

Citation

Li, Q., Xu, S., Li, G., Dai, D., & Che, C. (2006). Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells. Applied Physics Letters, 89(1), https://doi.org/10.1063/1.2218772

Journal Article Type Article
Publication Date Jul 3, 2006
Deposit Date Sep 29, 2010
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 89
Issue 1
DOI https://doi.org/10.1063/1.2218772

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