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Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy.

Cirlin, G.E. and Dubrovskii, V.G. and Samsonenko, Y.B. and Bouravleuv, A.D. and Durose, K. and Proskuryakov, Y.Y. and Mendes, B. and Bowen, L. and Kaliteevski, M.A. and Abram, R.A. and Zeze, D. (2010) 'Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy.', Physical review B., 82 (3). 035302 .


We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires directly on Si(111) substrates. The growth is catalyzed by liquid Ga droplets formed in the openings of a native oxide layer at the initial growth stage. Transmission electron microscopy studies demonstrate that the nanowires are single crystals having the zincblende structure along their length (apart from a thin wurtzite region directly below the Ga droplet), regardless of their diameter (70–80 nm) and the growth temperature range (560–630 °C). We attribute the observed phase purity to a much lower surface energy of liquid Ga than that of Au-Ga alloys, which makes triple line nucleation energetically unfavorable. The change in growth catalyst to a liquid metal with a lower energy suppresses the (more usual) formation of wurtzite nuclei on surface energetic grounds. These results can provide a distinct method for the fabrication of chemically pure and stacking-fault-free zincblende nanowires of III-V compounds on silicon.

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Publisher statement:© 2010 by The American Physical Society. All rights reserved.
Record Created:10 Nov 2010 16:35
Last Modified:08 Dec 2010 09:47

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