GE Cirlin
Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy
Cirlin, GE; Dubrovskii, VG; Samsonenko, YB; Bouravleuv, AD; Durose, K; Proskuryakov, YY; Mendes, B; Bowen, L; Kaliteevski, MA; Abram, RA; Zeze, D
Authors
VG Dubrovskii
YB Samsonenko
AD Bouravleuv
K Durose
YY Proskuryakov
B Mendes
L Bowen
MA Kaliteevski
RA Abram
D Zeze
Abstract
We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires directly on Si(111) substrates. The growth is catalyzed by liquid Ga droplets formed in the openings of a native oxide layer at the initial growth stage. Transmission electron microscopy studies demonstrate that the nanowires are single crystals having the zincblende structure along their length (apart from a thin wurtzite region directly below the Ga droplet), regardless of their diameter (70–80 nm) and the growth temperature range (560–630 °C). We attribute the observed phase purity to a much lower surface energy of liquid Ga than that of Au-Ga alloys, which makes triple line nucleation energetically unfavorable. The change in growth catalyst to a liquid metal with a lower energy suppresses the (more usual) formation of wurtzite nuclei on surface energetic grounds. These results can provide a distinct method for the fabrication of chemically pure and stacking-fault-free zincblende nanowires of III-V compounds on silicon.
Citation
Cirlin, G., Dubrovskii, V., Samsonenko, Y., Bouravleuv, A., Durose, K., Proskuryakov, Y., …Zeze, D. (2010). Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy. Physical review B, 82(3), Article 035302. https://doi.org/10.1103/physrevb.82.035302
Journal Article Type | Article |
---|---|
Publication Date | Jul 1, 2010 |
Deposit Date | Sep 20, 2010 |
Publicly Available Date | Nov 11, 2010 |
Journal | Physical Review B |
Print ISSN | 1098-0121 |
Electronic ISSN | 1550-235X |
Publisher | American Physical Society |
Peer Reviewed | Peer Reviewed |
Volume | 82 |
Issue | 3 |
Article Number | 035302 |
DOI | https://doi.org/10.1103/physrevb.82.035302 |
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