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Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

Cirlin, GE; Dubrovskii, VG; Samsonenko, YB; Bouravleuv, AD; Durose, K; Proskuryakov, YY; Mendes, B; Bowen, L; Kaliteevski, MA; Abram, RA; Zeze, D

Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy Thumbnail


Authors

GE Cirlin

VG Dubrovskii

YB Samsonenko

AD Bouravleuv

K Durose

YY Proskuryakov

B Mendes

L Bowen

MA Kaliteevski

RA Abram

D Zeze



Abstract

We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires directly on Si(111) substrates. The growth is catalyzed by liquid Ga droplets formed in the openings of a native oxide layer at the initial growth stage. Transmission electron microscopy studies demonstrate that the nanowires are single crystals having the zincblende structure along their length (apart from a thin wurtzite region directly below the Ga droplet), regardless of their diameter (70–80 nm) and the growth temperature range (560–630 °C). We attribute the observed phase purity to a much lower surface energy of liquid Ga than that of Au-Ga alloys, which makes triple line nucleation energetically unfavorable. The change in growth catalyst to a liquid metal with a lower energy suppresses the (more usual) formation of wurtzite nuclei on surface energetic grounds. These results can provide a distinct method for the fabrication of chemically pure and stacking-fault-free zincblende nanowires of III-V compounds on silicon.

Citation

Cirlin, G., Dubrovskii, V., Samsonenko, Y., Bouravleuv, A., Durose, K., Proskuryakov, Y., …Zeze, D. (2010). Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy. Physical review B, 82(3), Article 035302. https://doi.org/10.1103/physrevb.82.035302

Journal Article Type Article
Publication Date Jul 1, 2010
Deposit Date Sep 20, 2010
Publicly Available Date Nov 11, 2010
Journal Physical Review B
Print ISSN 1098-0121
Electronic ISSN 1550-235X
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 82
Issue 3
Article Number 035302
DOI https://doi.org/10.1103/physrevb.82.035302

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© 2010 by The American Physical Society. All rights reserved.




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