Herbert, D.C. and Childs, P.A. and Abram, R.A. and Crow, G.C. and Walmsley, M. (2005) 'Monte Carlo simulations of high-speed InSb-InAlSb FETs.', IEEE transactions on electron devices., 52 (6). pp. 1072-1078.
Self consistent Monte Carlo simulations which include impact ionization are used to study the high-speed potential of InSb field-effect transistors. It is found that the impact ionization has a strong influence on the performance of InSb for high speed. The ionization leads to a high electron drift velocity and substrate bias can be used to extract the holes which are generated in the channel. Residual hole density within the channel, however, limits the maximum speed. The substrate bias and buffer doping are critical for extracting holes from the channel without inducing excess ionization. Simulations yield a peak cutoff frequency of 820 GHz with a 0.03125-μm gate, a source to drain voltage of 0.58, and a sheet doping density of 1.7×1012 cm-2.
|Keywords:||High-speed response, InSb, MODFET, Monte Carlo simulation, Impact ionization, Low power.|
|Full text:||(VoR) Version of Record|
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|Publisher Web site:||http://dx.doi.org/10.1109/TED.2005.848115|
|Record Created:||16 Dec 2010 09:50|
|Last Modified:||17 Dec 2010 12:40|
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