DC Herbert
Monte Carlo simulations of high-speed InSb-InAlSb FETs
Herbert, DC; Childs, PA; Abram, RA; Crow, GC; Walmsley, M
Authors
PA Childs
RA Abram
GC Crow
M Walmsley
Abstract
Self consistent Monte Carlo simulations which include impact ionization are used to study the high-speed potential of InSb field-effect transistors. It is found that the impact ionization has a strong influence on the performance of InSb for high speed. The ionization leads to a high electron drift velocity and substrate bias can be used to extract the holes which are generated in the channel. Residual hole density within the channel, however, limits the maximum speed. The substrate bias and buffer doping are critical for extracting holes from the channel without inducing excess ionization. Simulations yield a peak cutoff frequency of 820 GHz with a 0.03125-μm gate, a source to drain voltage of 0.58, and a sheet doping density of 1.7×1012 cm-2.
Citation
Herbert, D., Childs, P., Abram, R., Crow, G., & Walmsley, M. (2005). Monte Carlo simulations of high-speed InSb-InAlSb FETs. IEEE Transactions on Electron Devices, 52(6), 1072-1078. https://doi.org/10.1109/ted.2005.848115
Journal Article Type | Article |
---|---|
Publication Date | Jun 1, 2005 |
Deposit Date | Dec 16, 2010 |
Publicly Available Date | Mar 29, 2024 |
Journal | IEEE Transactions on Electron Devices |
Print ISSN | 0018-9383 |
Publisher | Institute of Electrical and Electronics Engineers |
Peer Reviewed | Peer Reviewed |
Volume | 52 |
Issue | 6 |
Pages | 1072-1078 |
DOI | https://doi.org/10.1109/ted.2005.848115 |
Keywords | High-speed response, InSb, MODFET, Monte Carlo simulation, Impact ionization, Low power. |
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