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Self-consistent 2-D Monte Carlo simulations of InSb APD.

Herbert, D.C. and Childs, P.A. and Abram, R.A. and Crow, G.C. and Walmsley, M. (2005) 'Self-consistent 2-D Monte Carlo simulations of InSb APD.', IEEE transactions on electron devices., 52 (10). pp. 2175-2181.

Abstract

Self-consistent Monte Carlo simulations are used to study the low noise and high gain potential of InSb avalanche photodiodes. It is found that for an electron-initiated avalanche, excess noise factors well below the minimum McIntyre value persist up to gain values of around 60 for a 3.2 μm avalanche region. For these very low noise values, it is found that multiplication has a very unusual voltage dependence which may be exploited for highly efficient novel low noise planar arrays operating at low voltage.

Item Type:Article
Keywords:Avalanche photodetector, Dead space, Detector arrays, impactionization, InSb, Low noise, Monte Carlo (MC) simulation, Field-effect transistors, Avalanche photodiodes, Impact ionizaton, Diodes, Noise.
Full text:PDF - Published Version (526Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1109/TED.2005.856802
Publisher statement:© 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Record Created:16 Dec 2010 09:50
Last Modified:17 Dec 2010 12:31

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